剂量率稳定度
The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.
在室温条件下,研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。
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